1. Drive circuit: Due to the trade-off between UCE (sat) and short-circuit tolerance of IGBT, it is recommended to select the gate voltage as +UG=15V±10%,—UG =5~10V. The gate resistance is closely related to the turn-on and turn-off characteristics of the IGBT. The RG hour switching loss is reduced, the switching time is shortened, and the turn-off pulse voltage is increased. The appropriate RG value should be chosen based on the best compromise between surge voltage and switching loss (frequency dependent), typically chosen to be 10~27Ω. To prevent the gate from opening, connect a 20~30kΩ resistor in parallel with the emitter and emitter.

2. Protection circuit: When the IGBT module is used at high frequency, the wiring inductance is prone to spike voltage, and attention must be paid to the wiring inductance and component configuration. The protection items should be: over current protection, over voltage protection, gate overvoltage and undervoltage protection, safe working area, overheat protection.

3. Absorption circuit: Since the IGBT switching speed is fast, it is easy to generate surge voltage, so a surge clamp circuit must be provided.

4. When the IGBTs are used in parallel, the wiring of the gate circuit, the current imbalance, and the temperature imbalance between the devices should be considered.

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